Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
In this paper, buffer-free germanium-tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal-oxide-semiconductor processing conditions. The experimental results demonstrate that Ge<sub>0.928</sub>Sn&...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8481401/ |