Incorporation of Sb and As in MBE grown GaAsxSb1−x layers
With the increasing interest in low effective mass materials for intersubband devices, mixed As-Sb compounds, like GaAsxSb1−x or AlxIn1−xAsySb1−y, gain more and more attention. The growth of these materials, however, still provides significant challenges due to the comp...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4973216 |