Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx

Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx

Abstract A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and encapsulation of GaN in a single processing step, thereby eliminating the need for both wet chemical etching of the...

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Bibliographic Details
Main Authors: Maximilian Christis, Alex Henning, Johannes D. Bartl, Andreas Zeidler, Bernhard Rieger, Martin Stutzmann, Ian D. Sharp
Format: Article
Language:English
Published: Wiley-VCH 2024-02-01
Series:Advanced Materials Interfaces
Subjects:
atomic layer deposition
gallium nitride
interface engineering
ohmic contacts
plasma modification
Online Access:https://doi.org/10.1002/admi.202300758

Internet

https://doi.org/10.1002/admi.202300758

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