Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx
Abstract A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and encapsulation of GaN in a single processing step, thereby eliminating the need for both wet chemical etching of the...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-02-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300758 |