Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications
Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. Challenges of applying such fast switches include...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
China Electrotechnical Society
2017-09-01
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| Series: | CES Transactions on Electrical Machines and Systems |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8086107 |