Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Abstract In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs sub...

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Bibliographic Details
Main Authors: D. Benyahia, Ł. Kubiszyn, K. Michalczewski, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
Format: Article
Language:English
Published: SpringerOpen 2018-07-01
Series:Nanoscale Research Letters
Subjects:
Molecular beam epitaxy
Type-II superlattices
Hall effect
High-resolution X-ray diffraction
Online Access:http://link.springer.com/article/10.1186/s11671-018-2612-4

Internet

http://link.springer.com/article/10.1186/s11671-018-2612-4

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