Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Abstract In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs sub...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2612-4 |
| _version_ | 1797715543636049920 |
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| author | D. Benyahia Ł. Kubiszyn K. Michalczewski J. Boguski A. Kębłowski P. Martyniuk J. Piotrowski A. Rogalski |
| author_facet | D. Benyahia Ł. Kubiszyn K. Michalczewski J. Boguski A. Kębłowski P. Martyniuk J. Piotrowski A. Rogalski |
| author_sort | D. Benyahia |
| collection | DOAJ |
| description | Abstract In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is reduced by the growth of GaSb buffer layer based on interfacial misfit array (IMF) technique. In order to compensate the strain in the InAs/GaSb T2SL, we utilized a special shutters sequence to get InSb-like and GaAs-like interfaces. It is found that the MWIR InAs/GaSb T2SL exhibits a p- and n-type conduction at low and high temperatures, respectively. Interestingly, the conduction change temperature is observed to be dependent on the growth temperature. On the other hand, LWIR T2SL conduction is dominated only by electrons. It is important to note that the dominant scattering mechanism in LWIR T2SL at low temperatures is the interface roughness scattering mechanism. |
| first_indexed | 2024-03-12T08:08:19Z |
| format | Article |
| id | doaj.art-e6448b222ad74a06a4129365b441cfbd |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:08:19Z |
| publishDate | 2018-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-e6448b222ad74a06a4129365b441cfbd2023-09-02T19:20:49ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-07-011311710.1186/s11671-018-2612-4Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam EpitaxyD. Benyahia0Ł. Kubiszyn1K. Michalczewski2J. Boguski3A. Kębłowski4P. Martyniuk5J. Piotrowski6A. Rogalski7Institute of Applied Physics, Military University of TechnologyVigo System S.A.Institute of Applied Physics, Military University of TechnologyInstitute of Applied Physics, Military University of TechnologyVigo System S.A.Institute of Applied Physics, Military University of TechnologyVigo System S.A.Institute of Applied Physics, Military University of TechnologyAbstract In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is reduced by the growth of GaSb buffer layer based on interfacial misfit array (IMF) technique. In order to compensate the strain in the InAs/GaSb T2SL, we utilized a special shutters sequence to get InSb-like and GaAs-like interfaces. It is found that the MWIR InAs/GaSb T2SL exhibits a p- and n-type conduction at low and high temperatures, respectively. Interestingly, the conduction change temperature is observed to be dependent on the growth temperature. On the other hand, LWIR T2SL conduction is dominated only by electrons. It is important to note that the dominant scattering mechanism in LWIR T2SL at low temperatures is the interface roughness scattering mechanism.http://link.springer.com/article/10.1186/s11671-018-2612-4Molecular beam epitaxyType-II superlatticesHall effectHigh-resolution X-ray diffraction |
| spellingShingle | D. Benyahia Ł. Kubiszyn K. Michalczewski J. Boguski A. Kębłowski P. Martyniuk J. Piotrowski A. Rogalski Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy Nanoscale Research Letters Molecular beam epitaxy Type-II superlattices Hall effect High-resolution X-ray diffraction |
| title | Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy |
| title_full | Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy |
| title_fullStr | Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy |
| title_full_unstemmed | Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy |
| title_short | Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy |
| title_sort | electrical properties of midwave and longwave inas gasb superlattices grown on gaas substrates by molecular beam epitaxy |
| topic | Molecular beam epitaxy Type-II superlattices Hall effect High-resolution X-ray diffraction |
| url | http://link.springer.com/article/10.1186/s11671-018-2612-4 |
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