Sub-Nanosecond, High Peak Power Yb:YAG/Cr<sup>4+</sup>:YAG/YVO<sub>4</sub> Passively Q-Switched Raman Microchip Laser with the Emission of Multiple Pulses

Sub-Nanosecond, High Peak Power Yb:YAG/Cr<sup>4+</sup>:YAG/YVO<sub>4</sub> Passively Q-Switched Raman Microchip Laser with the Emission of Multiple Pulses

This paper demonstrates the capability of sub-nanosecond, high peak power Yb:YAG/Cr<sup>4+</sup>:YAG/YVO<sub>4</sub> passively Q-switched Raman microchip lasers at 1134 nm operated in multiple pulses mode under quasi-continuous-wave (QCW) pumping. Total pulse energy for the S...

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Bibliographic Details
Main Authors: Xiaolei Wang, Chaoyi Zhang, Yanlu Zhang, Shengying Fan, Xinqiang Ma, Wei Cheng
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Photonics
Subjects:
microchip lasers
passively Q-switched
Raman lasers
Yb:YAG
YVO<sub>4</sub>
Online Access:https://www.mdpi.com/2304-6732/11/1/61

Internet

https://www.mdpi.com/2304-6732/11/1/61

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