Bottom Contact 100 nm Channel‐Length α‐In2Se3 In‐Plane Ferroelectric Memory
Abstract Owing to the emerging trend of non‐volatile memory and data‐centric computing, the demand for more functional materials and efficient device architecture at the nanoscale is becoming stringent. To date, 2D ferroelectrics are cultivated as channel materials in field‐effect transistors for th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-10-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202303032 |