2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters

This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-...

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Bibliographic Details
Main Authors: Valentin Jmerik, Dmitrii Nechaev, Alexey Semenov, Eugenii Evropeitsev, Tatiana Shubina, Alexey Toropov, Maria Yagovkina, Prokhor Alekseev, Bogdan Borodin, Kseniya Orekhova, Vladimir Kozlovsky, Mikhail Zverev, Nikita Gamov, Tao Wang, Xinqiang Wang, Markus Pristovsek, Hiroshi Amano, Sergey Ivanov
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Nanomaterials
Subjects:
monolayer thick GaN/AlN multiple quantum wells
III-nitrides
carrier localization
plasma-assisted molecular beam epitaxy
electron-beam pumped UVC emitters
Online Access:https://www.mdpi.com/2079-4991/13/6/1077

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https://www.mdpi.com/2079-4991/13/6/1077

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