2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters
This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-...
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MDPI AG
2023-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/6/1077 |
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| author | Valentin Jmerik Dmitrii Nechaev Alexey Semenov Eugenii Evropeitsev Tatiana Shubina Alexey Toropov Maria Yagovkina Prokhor Alekseev Bogdan Borodin Kseniya Orekhova Vladimir Kozlovsky Mikhail Zverev Nikita Gamov Tao Wang Xinqiang Wang Markus Pristovsek Hiroshi Amano Sergey Ivanov |
| author_facet | Valentin Jmerik Dmitrii Nechaev Alexey Semenov Eugenii Evropeitsev Tatiana Shubina Alexey Toropov Maria Yagovkina Prokhor Alekseev Bogdan Borodin Kseniya Orekhova Vladimir Kozlovsky Mikhail Zverev Nikita Gamov Tao Wang Xinqiang Wang Markus Pristovsek Hiroshi Amano Sergey Ivanov |
| author_sort | Valentin Jmerik |
| collection | DOAJ |
| description | This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-beam epitaxy in a wide range of gallium and activated nitrogen flux ratios (Ga/N<sub>2</sub>*) on <i>c</i>-sapphire substrates. An increase in the Ga/N<sub>2</sub>* ratio from 1.1 to 2.2 made it possible to change the 2D-topography of the structures due to a transition from the mixed spiral and 2D-nucleation growth to a purely spiral growth. As a result, the emission energy (wavelength) could be varied from 5.21 eV (238 nm) to 4.68 eV (265 nm) owing to the correspondingly increased carrier localization energy. Using electron-beam pumping with a maximum pulse current of 2 A at an electron energy of 12.5 keV, a maximum output optical power of 50 W was achieved for the 265 nm structure, while the structure emitting at 238 nm demonstrated a power of 10 W. |
| first_indexed | 2024-03-11T06:05:38Z |
| format | Article |
| id | doaj.art-e68a391da1a54fb48871c3f2373bfe32 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T06:05:38Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-e68a391da1a54fb48871c3f2373bfe322023-11-17T13:01:15ZengMDPI AGNanomaterials2079-49912023-03-01136107710.3390/nano130610772D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC EmittersValentin Jmerik0Dmitrii Nechaev1Alexey Semenov2Eugenii Evropeitsev3Tatiana Shubina4Alexey Toropov5Maria Yagovkina6Prokhor Alekseev7Bogdan Borodin8Kseniya Orekhova9Vladimir Kozlovsky10Mikhail Zverev11Nikita Gamov12Tao Wang13Xinqiang Wang14Markus Pristovsek15Hiroshi Amano16Sergey Ivanov17Ioffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaLebedev Physical Institute, Leninsky Avenue 53, Moscow 119991, RussiaLebedev Physical Institute, Leninsky Avenue 53, Moscow 119991, RussiaLebedev Physical Institute, Leninsky Avenue 53, Moscow 119991, RussiaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nanooptoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nanooptoelectronics, School of Physics, Peking University, Beijing 100871, ChinaInstitute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Chikusa-Ku, Furo-Cho, Nagoya 464-8601, JapanInstitute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Chikusa-Ku, Furo-Cho, Nagoya 464-8601, JapanIoffe Institute, 26 Politekhnicheskaya, Saint Petersburg 194021, RussiaThis article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN barrier layers, which were grown by plasma-assisted molecular-beam epitaxy in a wide range of gallium and activated nitrogen flux ratios (Ga/N<sub>2</sub>*) on <i>c</i>-sapphire substrates. An increase in the Ga/N<sub>2</sub>* ratio from 1.1 to 2.2 made it possible to change the 2D-topography of the structures due to a transition from the mixed spiral and 2D-nucleation growth to a purely spiral growth. As a result, the emission energy (wavelength) could be varied from 5.21 eV (238 nm) to 4.68 eV (265 nm) owing to the correspondingly increased carrier localization energy. Using electron-beam pumping with a maximum pulse current of 2 A at an electron energy of 12.5 keV, a maximum output optical power of 50 W was achieved for the 265 nm structure, while the structure emitting at 238 nm demonstrated a power of 10 W.https://www.mdpi.com/2079-4991/13/6/1077monolayer thick GaN/AlN multiple quantum wellsIII-nitridescarrier localizationplasma-assisted molecular beam epitaxyelectron-beam pumped UVC emitters |
| spellingShingle | Valentin Jmerik Dmitrii Nechaev Alexey Semenov Eugenii Evropeitsev Tatiana Shubina Alexey Toropov Maria Yagovkina Prokhor Alekseev Bogdan Borodin Kseniya Orekhova Vladimir Kozlovsky Mikhail Zverev Nikita Gamov Tao Wang Xinqiang Wang Markus Pristovsek Hiroshi Amano Sergey Ivanov 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters Nanomaterials monolayer thick GaN/AlN multiple quantum wells III-nitrides carrier localization plasma-assisted molecular beam epitaxy electron-beam pumped UVC emitters |
| title | 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters |
| title_full | 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters |
| title_fullStr | 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters |
| title_full_unstemmed | 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters |
| title_short | 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters |
| title_sort | 2d gan aln multiple quantum disks quantum well heterostructures for high power electron beam pumped uvc emitters |
| topic | monolayer thick GaN/AlN multiple quantum wells III-nitrides carrier localization plasma-assisted molecular beam epitaxy electron-beam pumped UVC emitters |
| url | https://www.mdpi.com/2079-4991/13/6/1077 |
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