Temperature characterization of GaAs/AlGaAs connecting tunnel diodes

Temperature characterization of GaAs/AlGaAs connecting tunnel diodes

The current-voltage characteristics of two types of GaAs-(δSi)/i-(GaAs/Al0.2Ga 0.8As)/p++-Al0.2Ga0.8As-(δBe) tunnel diode (TD) structures grown at different temperatures and epitaxial layer thicknesses have been investigated in the temperature range 100–400 K. Temperature dependences of the main TD...

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Bibliographic Details
Main Authors: Kontrosh Evgeniy, Kalinovskii Vitaliy, Klimko Grigory, Ber Boris, Prudchenko Kseniia, Tolkachev Ivan, Kazantsev Dmitry
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2023-12-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
current-voltage characteristics
tunnel diode
epitaxial layer
differential resistance
peak tunneling current
Online Access:https://physmath.spbstu.ru/article/2023.70.03/

Internet

https://physmath.spbstu.ru/article/2023.70.03/

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