Temperature characterization of GaAs/AlGaAs connecting tunnel diodes
The current-voltage characteristics of two types of GaAs-(δSi)/i-(GaAs/Al0.2Ga 0.8As)/p++-Al0.2Ga0.8As-(δBe) tunnel diode (TD) structures grown at different temperatures and epitaxial layer thicknesses have been investigated in the temperature range 100–400 K. Temperature dependences of the main TD...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Peter the Great St.Petersburg Polytechnic University
2023-12-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2023.70.03/ |
| _version_ | 1827371730090328064 |
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| author | Kontrosh Evgeniy Kalinovskii Vitaliy Klimko Grigory Ber Boris Prudchenko Kseniia Tolkachev Ivan Kazantsev Dmitry |
| author_facet | Kontrosh Evgeniy Kalinovskii Vitaliy Klimko Grigory Ber Boris Prudchenko Kseniia Tolkachev Ivan Kazantsev Dmitry |
| author_sort | Kontrosh Evgeniy |
| collection | DOAJ |
| description | The current-voltage characteristics of two types of GaAs-(δSi)/i-(GaAs/Al0.2Ga 0.8As)/p++-Al0.2Ga0.8As-(δBe) tunnel diode (TD) structures grown at different temperatures and epitaxial layer thicknesses have been investigated in the temperature range 100–400 K. Temperature dependences of the main TD parameters were determined: the peak value of the tunnel current density (Jp), the valley current density (Jv) and the differential resistance (Rd). TD samples of structure A grown at 500 °C exhibited the highest values of the peak current density (Jp ≤ 220 A/cm2) with temperature stability of 93 % over the whole temperature range. TD samples of structure B grown at 450 °C showed lower values of the peak tunneling current density (Jp ≤ 150 A/cm2), with significantly linear temperature dependence. Our findings can be used in the design and development of monolithic multijunction photoconverters of powerful laser radiation. |
| first_indexed | 2024-03-08T10:45:46Z |
| format | Article |
| id | doaj.art-e6a9e0ccca22457fa78d9ce6d6b52f8c |
| institution | Directory Open Access Journal |
| issn | 2405-7223 |
| language | English |
| last_indexed | 2024-03-08T10:45:46Z |
| publishDate | 2023-12-01 |
| publisher | Peter the Great St.Petersburg Polytechnic University |
| record_format | Article |
| series | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| spelling | doaj.art-e6a9e0ccca22457fa78d9ce6d6b52f8c2024-01-26T17:18:26ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232023-12-0116410.18721/JPM.1640320714726Temperature characterization of GaAs/AlGaAs connecting tunnel diodesKontrosh Evgeniy0https://orcid.org/0000-0003-1812-3714Kalinovskii Vitaliy1https://orcid.org/0000-0003-4858-7544Klimko Grigory2https://orcid.org/0000-0001-8893-7751Ber Boris3https://orcid.org/0000-0003-2934-4176Prudchenko Kseniia4https://orcid.org/0000-0003-4437-2984Tolkachev Ivan5https://orcid.org/0000-0001-8202-7087Kazantsev Dmitry6https://orcid.org/0000-0003-2173-1278Ioffe InstituteIoffe InstituteIoffe InstituteIoffe InstituteIoffe InstituteIoffe InstituteIoffe InstituteThe current-voltage characteristics of two types of GaAs-(δSi)/i-(GaAs/Al0.2Ga 0.8As)/p++-Al0.2Ga0.8As-(δBe) tunnel diode (TD) structures grown at different temperatures and epitaxial layer thicknesses have been investigated in the temperature range 100–400 K. Temperature dependences of the main TD parameters were determined: the peak value of the tunnel current density (Jp), the valley current density (Jv) and the differential resistance (Rd). TD samples of structure A grown at 500 °C exhibited the highest values of the peak current density (Jp ≤ 220 A/cm2) with temperature stability of 93 % over the whole temperature range. TD samples of structure B grown at 450 °C showed lower values of the peak tunneling current density (Jp ≤ 150 A/cm2), with significantly linear temperature dependence. Our findings can be used in the design and development of monolithic multijunction photoconverters of powerful laser radiation.https://physmath.spbstu.ru/article/2023.70.03/current-voltage characteristicstunnel diodeepitaxial layerdifferential resistancepeak tunneling current |
| spellingShingle | Kontrosh Evgeniy Kalinovskii Vitaliy Klimko Grigory Ber Boris Prudchenko Kseniia Tolkachev Ivan Kazantsev Dmitry Temperature characterization of GaAs/AlGaAs connecting tunnel diodes St. Petersburg Polytechnical University Journal: Physics and Mathematics current-voltage characteristics tunnel diode epitaxial layer differential resistance peak tunneling current |
| title | Temperature characterization of GaAs/AlGaAs connecting tunnel diodes |
| title_full | Temperature characterization of GaAs/AlGaAs connecting tunnel diodes |
| title_fullStr | Temperature characterization of GaAs/AlGaAs connecting tunnel diodes |
| title_full_unstemmed | Temperature characterization of GaAs/AlGaAs connecting tunnel diodes |
| title_short | Temperature characterization of GaAs/AlGaAs connecting tunnel diodes |
| title_sort | temperature characterization of gaas algaas connecting tunnel diodes |
| topic | current-voltage characteristics tunnel diode epitaxial layer differential resistance peak tunneling current |
| url | https://physmath.spbstu.ru/article/2023.70.03/ |
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