Direct bonding of aluminum to alumina using a nickel interlayer for power electronics applications

Three films of Ni with thicknesses of 100, 300, and 500 ​nm were deposited on an Al2O3 base and direct bonded with Al to form high-power electronic substrates for comparison. The microstructures of Al/Al2O3 joints were evaluated using a scanning electron microscope (SEM) and transmission electron mi...

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Bibliographic Details
Main Authors: Yu-Ting Wang, Yun-Hsiang Cheng, Chien-Cheng Lin, Kun-Lin Lin
Format: Article
Language:English
Published: Elsevier 2020-06-01
Series:Results in Materials
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590048X20300352