Edge transport in the trivial phase of InAs/GaSb

Edge transport in the trivial phase of InAs/GaSb

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivia...

Full description

Bibliographic Details
Main Authors: Fabrizio Nichele, Henri J Suominen, Morten Kjaergaard, Charles M Marcus, Ebrahim Sajadi, Joshua A Folk, Fanming Qu, Arjan J A Beukman, Folkert K de Vries, Jasper van Veen, Stevan Nadj-Perge, Leo P Kouwenhoven, Binh-Minh Nguyen, Andrey A Kiselev, Wei Yi, Marko Sokolich, Michael J Manfra, Eric M Spanton, Kathryn A Moler
Format: Article
Language:English
Published: IOP Publishing 2016-01-01
Series:New Journal of Physics
Subjects:
quantum spin Hall effect
topological insulator
scanning SQUID
InAs/GaSb
Online Access:https://doi.org/10.1088/1367-2630/18/8/083005

Internet

https://doi.org/10.1088/1367-2630/18/8/083005

Similar Items