Reduced Bipolar Conduction in Bandgap-Engineered <i>n</i>-Type Cu<sub>0.008</sub>Bi<sub>2</sub>(Te,Se)<sub>3</sub> by Sulfur Doping

Reduced Bipolar Conduction in Bandgap-Engineered <i>n</i>-Type Cu<sub>0.008</sub>Bi<sub>2</sub>(Te,Se)<sub>3</sub> by Sulfur Doping

Significant bipolar conduction of the carriers in Bi<sub>2</sub>Te<sub>3</sub>-based alloys occurs at high temperatures due to their narrow bandgaps. Therefore, at high temperatures, their Seebeck coefficients decrease, the bipolar thermal conductivities rapidly increase, and...

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Bibliographic Details
Main Authors: Weon Ho Shin, Hyun-Sik Kim, Se Yun Kim, Sung-sil Choo, Seok-won Hong, Yeseong Oh, Yerim Yang, Yoona Kim, Hee Jung Park, Sang-il Kim
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Energies
Subjects:
thermoelectric
bipolar conduction
s doping
bandgap
point defect
Online Access:https://www.mdpi.com/1996-1073/13/2/337

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https://www.mdpi.com/1996-1073/13/2/337

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