Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System
Multi-gate field effect transistors (FETs) such as FinFETs are severely affected by short-channel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring fringing capacitances. This leads to performance degradation of the devices, which inhibits further scaling of nanoFETs, dete...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/10/1662 |