Leakage Current Stability Analysis for Subthreshold SRAM
Low-power memories typically operate in the subthreshold region of the device; however, as the supply voltage continues to decrease, the impact of leakage current on SRAM stability becomes more significant. The traditional method of measuring static noise tolerance only considers the effect of volta...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/8/1196 |