Rapid synthesis of dielectric tantalum-based oxynitrides
Perovskite-type oxynitride with a general formula of ATa(O,N)3 (A = Sr, Ba) is a class of promising dielectric material due to their very high permittivity. Conventional synthesis routes for these materials always require multiple processing steps, long durations and elevated temperatures. In this s...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2020-02-01
|
Series: | Materials & Design |
Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127519308548 |
_version_ | 1818546931943604224 |
---|---|
author | Duan Li Liang Zeng Bin Li Xuejin Yang Qiuping Yu Zhongshuai Wu |
author_facet | Duan Li Liang Zeng Bin Li Xuejin Yang Qiuping Yu Zhongshuai Wu |
author_sort | Duan Li |
collection | DOAJ |
description | Perovskite-type oxynitride with a general formula of ATa(O,N)3 (A = Sr, Ba) is a class of promising dielectric material due to their very high permittivity. Conventional synthesis routes for these materials always require multiple processing steps, long durations and elevated temperatures. In this study, thermodynamic calculations were employed to predict the feasible synthesis reactions, possible impurities and reasonable processing parameters. Then, ceramic powders of SrTaO2N and BaTaO2N were fabricated through direct calcination of SrCO3/BaCO3 and Ta2O5 with urea as nitrogen source by using a modified pressureless spark plasma sintering set-up. High-purity oxynitrides can be obtained within 10 min. Thermal stability, corrosion resistance and dielectric property were evaluated. The results showed that SrTaO2N was thermally stable up to 475 °C in air while that temperature for BaTaO2N was 605 °C. The oxynitrides possessed a good resistance to hot water and strong acid/alkali. BaTaO2N had a very high room-temperature relative permittivity up to 9550 with a dielectric loss down to 0.001 at 100 Hz, while the values for SrTaO2N were 3141 and 0.017 respectively. The temperature dependence of permittivity for BaTaO2N was weak at −10–200 °C. The efficient synthesis method enabled the fast preparation of the tantalum-based oxynitride materials for energy storage applications. Keywords: Perovskite, Oxynitride, Urea, Spark plasma sintering, Permittivity |
first_indexed | 2024-12-12T07:59:50Z |
format | Article |
id | doaj.art-e7775bb974814f33929835d1e7415856 |
institution | Directory Open Access Journal |
issn | 0264-1275 |
language | English |
last_indexed | 2024-12-12T07:59:50Z |
publishDate | 2020-02-01 |
publisher | Elsevier |
record_format | Article |
series | Materials & Design |
spelling | doaj.art-e7775bb974814f33929835d1e74158562022-12-22T00:32:11ZengElsevierMaterials & Design0264-12752020-02-01187Rapid synthesis of dielectric tantalum-based oxynitridesDuan Li0Liang Zeng1Bin Li2Xuejin Yang3Qiuping Yu4Zhongshuai Wu5Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, PR China; Corresponding authors.Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, PR ChinaSchool of Materials, Sun Yat-sen University, Guangzhou 510275, PR China; Corresponding authors.Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, PR ChinaScience and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, PR ChinaScience and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, PR ChinaPerovskite-type oxynitride with a general formula of ATa(O,N)3 (A = Sr, Ba) is a class of promising dielectric material due to their very high permittivity. Conventional synthesis routes for these materials always require multiple processing steps, long durations and elevated temperatures. In this study, thermodynamic calculations were employed to predict the feasible synthesis reactions, possible impurities and reasonable processing parameters. Then, ceramic powders of SrTaO2N and BaTaO2N were fabricated through direct calcination of SrCO3/BaCO3 and Ta2O5 with urea as nitrogen source by using a modified pressureless spark plasma sintering set-up. High-purity oxynitrides can be obtained within 10 min. Thermal stability, corrosion resistance and dielectric property were evaluated. The results showed that SrTaO2N was thermally stable up to 475 °C in air while that temperature for BaTaO2N was 605 °C. The oxynitrides possessed a good resistance to hot water and strong acid/alkali. BaTaO2N had a very high room-temperature relative permittivity up to 9550 with a dielectric loss down to 0.001 at 100 Hz, while the values for SrTaO2N were 3141 and 0.017 respectively. The temperature dependence of permittivity for BaTaO2N was weak at −10–200 °C. The efficient synthesis method enabled the fast preparation of the tantalum-based oxynitride materials for energy storage applications. Keywords: Perovskite, Oxynitride, Urea, Spark plasma sintering, Permittivityhttp://www.sciencedirect.com/science/article/pii/S0264127519308548 |
spellingShingle | Duan Li Liang Zeng Bin Li Xuejin Yang Qiuping Yu Zhongshuai Wu Rapid synthesis of dielectric tantalum-based oxynitrides Materials & Design |
title | Rapid synthesis of dielectric tantalum-based oxynitrides |
title_full | Rapid synthesis of dielectric tantalum-based oxynitrides |
title_fullStr | Rapid synthesis of dielectric tantalum-based oxynitrides |
title_full_unstemmed | Rapid synthesis of dielectric tantalum-based oxynitrides |
title_short | Rapid synthesis of dielectric tantalum-based oxynitrides |
title_sort | rapid synthesis of dielectric tantalum based oxynitrides |
url | http://www.sciencedirect.com/science/article/pii/S0264127519308548 |
work_keys_str_mv | AT duanli rapidsynthesisofdielectrictantalumbasedoxynitrides AT liangzeng rapidsynthesisofdielectrictantalumbasedoxynitrides AT binli rapidsynthesisofdielectrictantalumbasedoxynitrides AT xuejinyang rapidsynthesisofdielectrictantalumbasedoxynitrides AT qiupingyu rapidsynthesisofdielectrictantalumbasedoxynitrides AT zhongshuaiwu rapidsynthesisofdielectrictantalumbasedoxynitrides |