Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Resistive random access memory (RRAM) has become one of the representatives of the next generation of nonvolatile memory because of its excellent performance, and the data reading function is caused by the growth and fracture of the conductive filament (CF) in the switch layer. Therefore, the study...

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Bibliographic Details
Main Authors: Sichen Qin, Yifei Ma, Qian Wang, Jiawei Zhang, Guiquan Zhang, Lixin Yang, Rui Liu
Format: Article
Language:English
Published: Elsevier 2023-03-01
Series:Energy Reports
Subjects:
Resistive random-access memory (RRAM)
Electrothermal physical model
Resistance characteristics
Conductive filament
Online Access:http://www.sciencedirect.com/science/article/pii/S2352484722025197

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http://www.sciencedirect.com/science/article/pii/S2352484722025197

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