Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Laser junction temperature (Tj) is an essential parameter that directly affects the light power and lifetime of semiconductor lasers. Here, we investigate the effect of Tj on an InAs/GaAs quantum dot (QD) laser grown on a Si(001) substrate. Under 1% low pulsed current (1 µs pulse width and 100 µs pe...

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Bibliographic Details
Main Authors: Shuai Wang, Zun-Ren Lv, Sheng-Lin Wang, Xiao-Guang Yang, Tao Yang
Format: Article
Language:English
Published: AIP Publishing LLC 2024-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0168625

Internet

http://dx.doi.org/10.1063/5.0168625

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