Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic pro...
| Egile Nagusiak: | , , , , , |
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| Formatua: | Artikulua |
| Hizkuntza: | English |
| Argitaratua: |
Frontiers Media S.A.
2020-12-01
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| Saila: | Frontiers in Chemistry |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.frontiersin.org/articles/10.3389/fchem.2020.607481/full |