Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve the threshold voltage and output saturation c...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
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Editorial Department of Journal of Nantong University (Natural Science Edition)
2021-06-01
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| Շարք: | Nantong Daxue xuebao. Ziran kexue ban |
| Խորագրեր: |