Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve the threshold voltage and output saturation c...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Editorial Department of Journal of Nantong University (Natural Science Edition)
2021-06-01
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| Series: | Nantong Daxue xuebao. Ziran kexue ban |
| Subjects: |
| _version_ | 1818330696495661056 |
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| author | GE Mei; LI Yi; WANG Zhiliang ZHU Youhua |
| author_facet | GE Mei; LI Yi; WANG Zhiliang ZHU Youhua |
| author_sort | GE Mei; |
| collection | DOAJ |
| description | In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve the threshold voltage and output saturation current of the device, the transfer and output curves are provided by Silvaco TCAD with adjustable thickness of AlGaN barrier layer and Al mole fraction.The thickness of the AlGaN barrier layer is optimized as 20 nm, and the Al mole fraction is optimized as 0.27,resulting in a lager threshold voltage and output saturation current. The band structure of the device and the electron concentration in the AlGaN/GaN channel are simulated to further study the physical mechanism on the relationship between device structure and the performance of the device. The results of the simulation shows that with increase of the thickness of AlGaN barrier layer and Al mole fraction the threshold voltage of the device decreases, while the output saturation current increases. The threshold voltage of the device is related to the band structure when the device is at the off-state, and the output saturation current is related to the electron concentration in the AlGaN/GaN channel when the device is at on-state. |
| first_indexed | 2024-12-13T13:08:03Z |
| format | Article |
| id | doaj.art-e7f74e74ea9142eda7297bac1a752a69 |
| institution | Directory Open Access Journal |
| issn | 1673-2340 |
| language | English |
| last_indexed | 2024-12-13T13:08:03Z |
| publishDate | 2021-06-01 |
| publisher | Editorial Department of Journal of Nantong University (Natural Science Edition) |
| record_format | Article |
| series | Nantong Daxue xuebao. Ziran kexue ban |
| spelling | doaj.art-e7f74e74ea9142eda7297bac1a752a692022-12-21T23:44:46ZengEditorial Department of Journal of Nantong University (Natural Science Edition)Nantong Daxue xuebao. Ziran kexue ban1673-23402021-06-012025761+6810.12194/j.ntu.20191010001Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility TransistorsGE Mei;LI Yi;0WANG Zhiliang1ZHU Youhua2School of Information Science and Technology, Nantong UniversitySchool of Information Science and Technology, Nantong UniversitySchool of Information Science and Technology, Nantong UniversityIn order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve the threshold voltage and output saturation current of the device, the transfer and output curves are provided by Silvaco TCAD with adjustable thickness of AlGaN barrier layer and Al mole fraction.The thickness of the AlGaN barrier layer is optimized as 20 nm, and the Al mole fraction is optimized as 0.27,resulting in a lager threshold voltage and output saturation current. The band structure of the device and the electron concentration in the AlGaN/GaN channel are simulated to further study the physical mechanism on the relationship between device structure and the performance of the device. The results of the simulation shows that with increase of the thickness of AlGaN barrier layer and Al mole fraction the threshold voltage of the device decreases, while the output saturation current increases. The threshold voltage of the device is related to the band structure when the device is at the off-state, and the output saturation current is related to the electron concentration in the AlGaN/GaN channel when the device is at on-state.p-gan gateganhigh electron mobility transistorsimulation |
| spellingShingle | GE Mei; LI Yi; WANG Zhiliang ZHU Youhua Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors Nantong Daxue xuebao. Ziran kexue ban p-gan gate gan high electron mobility transistor simulation |
| title | Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors |
| title_full | Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors |
| title_fullStr | Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors |
| title_full_unstemmed | Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors |
| title_short | Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors |
| title_sort | structural optimization of p gan gate gan based high electron mobility transistors |
| topic | p-gan gate gan high electron mobility transistor simulation |
| work_keys_str_mv | AT gemei structuraloptimizationofpgangateganbasedhighelectronmobilitytransistors AT liyi structuraloptimizationofpgangateganbasedhighelectronmobilitytransistors AT wangzhiliang structuraloptimizationofpgangateganbasedhighelectronmobilitytransistors AT zhuyouhua structuraloptimizationofpgangateganbasedhighelectronmobilitytransistors |