Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve the threshold voltage and output saturation c...

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Bibliographic Details
Main Authors:	GE Mei;, LI Yi;, WANG Zhiliang, ZHU Youhua
Format:	Article
Language:	English
Published:	Editorial Department of Journal of Nantong University (Natural Science Edition) 2021-06-01
Series:	Nantong Daxue xuebao. Ziran kexue ban
Subjects:	p-gan gate gan high electron mobility transistor simulation

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