Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors

Abstract Two‐dimensional material‐based field‐effect transistors (2DM‐FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM‐FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Rep...

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Bibliographic Details
Main Authors: Zhao‐Yi Yan, Zhan Hou, Kan‐Hao Xue, He Tian, Tian Lu, Junying Xue, Fan Wu, Ruiting Zhao, Minghao Shao, Jianlan Yan, Anzhi Yan, Zhenze Wang, Penghui Shen, Mingyue Zhao, Xiangshui Miao, Zhaoyang Lin, Houfang Liu, Yi Yang, Tian‐Ling Ren
Format: Article
Language:English
Published: Wiley 2023-12-01
Series:Advanced Science
Subjects:
ambipolar transport
contact transports
electronic design automation
field‐effect transistors
quasi‐Fermi levels
Schottky barriers
Online Access:https://doi.org/10.1002/advs.202303734

Internet

https://doi.org/10.1002/advs.202303734

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