Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors
Abstract Two‐dimensional material‐based field‐effect transistors (2DM‐FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM‐FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Rep...
| Main Authors: | , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-12-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202303734 |
| _version_ | 1827593760543866880 |
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| author | Zhao‐Yi Yan Zhan Hou Kan‐Hao Xue He Tian Tian Lu Junying Xue Fan Wu Ruiting Zhao Minghao Shao Jianlan Yan Anzhi Yan Zhenze Wang Penghui Shen Mingyue Zhao Xiangshui Miao Zhaoyang Lin Houfang Liu Yi Yang Tian‐Ling Ren |
| author_facet | Zhao‐Yi Yan Zhan Hou Kan‐Hao Xue He Tian Tian Lu Junying Xue Fan Wu Ruiting Zhao Minghao Shao Jianlan Yan Anzhi Yan Zhenze Wang Penghui Shen Mingyue Zhao Xiangshui Miao Zhaoyang Lin Houfang Liu Yi Yang Tian‐Ling Ren |
| author_sort | Zhao‐Yi Yan |
| collection | DOAJ |
| description | Abstract Two‐dimensional material‐based field‐effect transistors (2DM‐FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM‐FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi‐Fermi‐level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer‐QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM‐FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non‐monotonic drain conductance characteristics. A three‐bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM‐FET‐based integrated circuits. |
| first_indexed | 2024-03-09T02:17:26Z |
| format | Article |
| id | doaj.art-e7fc2765e4d74e9c938213aa14532d85 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-09T02:17:26Z |
| publishDate | 2023-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-e7fc2765e4d74e9c938213aa14532d852023-12-07T04:08:35ZengWileyAdvanced Science2198-38442023-12-011034n/an/a10.1002/advs.202303734Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional TransistorsZhao‐Yi Yan0Zhan Hou1Kan‐Hao Xue2He Tian3Tian Lu4Junying Xue5Fan Wu6Ruiting Zhao7Minghao Shao8Jianlan Yan9Anzhi Yan10Zhenze Wang11Penghui Shen12Mingyue Zhao13Xiangshui Miao14Zhaoyang Lin15Houfang Liu16Yi Yang17Tian‐Ling Ren18School of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Huazhong University of Science and Technology Wuhan 430074 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaDepartment of Chemistry Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Huazhong University of Science and Technology Wuhan 430074 ChinaDepartment of Chemistry Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Tsinghua University Beijing 100084 ChinaAbstract Two‐dimensional material‐based field‐effect transistors (2DM‐FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM‐FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi‐Fermi‐level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer‐QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM‐FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non‐monotonic drain conductance characteristics. A three‐bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM‐FET‐based integrated circuits.https://doi.org/10.1002/advs.202303734ambipolar transportcontact transportselectronic design automationfield‐effect transistorsquasi‐Fermi levelsSchottky barriers |
| spellingShingle | Zhao‐Yi Yan Zhan Hou Kan‐Hao Xue He Tian Tian Lu Junying Xue Fan Wu Ruiting Zhao Minghao Shao Jianlan Yan Anzhi Yan Zhenze Wang Penghui Shen Mingyue Zhao Xiangshui Miao Zhaoyang Lin Houfang Liu Yi Yang Tian‐Ling Ren Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors Advanced Science ambipolar transport contact transports electronic design automation field‐effect transistors quasi‐Fermi levels Schottky barriers |
| title | Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors |
| title_full | Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors |
| title_fullStr | Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors |
| title_full_unstemmed | Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors |
| title_short | Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors |
| title_sort | landauer qflps model for mixed schottky ohmic contact two dimensional transistors |
| topic | ambipolar transport contact transports electronic design automation field‐effect transistors quasi‐Fermi levels Schottky barriers |
| url | https://doi.org/10.1002/advs.202303734 |
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