Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions...

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Bibliographic Details
Main Authors: Tomas Ceponis, Jevgenij Pavlov, Arunas Kadys, Augustas Vaitkevicius, Eugenijus Gaubas
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Materials
Subjects:
gallium nitride
dislocations
wet etching
photoluminescence
pulsed photo-ionization spectroscopy
Online Access:https://www.mdpi.com/1996-1944/16/9/3424

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https://www.mdpi.com/1996-1944/16/9/3424

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