Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the...
| Autor principal: | |
|---|---|
| Format: | Article |
| Idioma: | English |
| Publicat: |
IOP Publishing
2020-01-01
|
| Col·lecció: | Materials Research Express |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1088/2053-1591/ab7a60 |