Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing
The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-10-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/20/6698 |