Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of...

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Bibliographic Details
Main Authors: Juyeong Pyo, Junwon Jang, Dongyeol Ju, Subaek Lee, Wonbo Shim, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Materials
Subjects:
neuromorphic system
memristor
synaptic device
resistive switching
amorphous boron nitride
Online Access:https://www.mdpi.com/1996-1944/16/20/6698

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