Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H)
Hydrogenated polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (<i>μ</i><sub...
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MDPI AG
2022-08-01
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| author | Yusaku Magari Wenchang Yeh Toshiaki Ina Mamoru Furuta |
| author_facet | Yusaku Magari Wenchang Yeh Toshiaki Ina Mamoru Furuta |
| author_sort | Yusaku Magari |
| collection | DOAJ |
| description | Hydrogenated polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (<i>μ</i><sub>FE</sub>) exceeding 100 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> are promising candidates for future electronics applications. In this study, we investigated the effects of the SPC temperature of Ar + O<sub>2</sub> + H<sub>2</sub>-sputtered In<sub>2</sub>O<sub>3</sub>:H films on the electron transport properties of In<sub>2</sub>O<sub>3</sub>:H TFTs. The In<sub>2</sub>O<sub>3</sub>:H TFT with an SPC temperature of 300 °C exhibited the best performance, having the largest <i>µ</i><sub>FE</sub> of 139.2 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. In contrast, the <i>µ</i><sub>FE</sub> was slightly degraded with increasing SPC temperature (400 °C and higher). Extended X-ray absorption fine structure analysis revealed that the medium-range ordering in the In<sub>2</sub>O<sub>3</sub>:H network was further improved by annealing up to 600 °C, while a large amount of H<sub>2</sub>O was desorbed from the In<sub>2</sub>O<sub>3</sub>:H films at SPC temperatures above 400 °C, resulting in the creation of defects at grain boundaries. The threshold temperature of H<sub>2</sub>O desorption corresponded well with the carrier transport properties; the <i>µ</i><sub>FE</sub> of the TFTs started to deteriorate at SPC temperatures of 400 °C and higher. Thus, it was suggested that the hydrogen remaining in the film after SPC plays an important role in the passivation of electron traps, especially for grain boundaries, resulting in an enhancement of the <i>µ</i><sub>FE</sub> of In<sub>2</sub>O<sub>3</sub>:H TFTs. |
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| spelling | doaj.art-e861354c261e49eaa8ac5c33865e4b772023-11-23T13:48:29ZengMDPI AGNanomaterials2079-49912022-08-011217295810.3390/nano12172958Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H)Yusaku Magari0Wenchang Yeh1Toshiaki Ina2Mamoru Furuta3Graduate School of Natural Science and Technology, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, JapanGraduate School of Natural Science and Technology, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, JapanJapan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo 679-5198, JapanSchool of Environmental Science and Engineering and Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami 782-8502, JapanHydrogenated polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (<i>μ</i><sub>FE</sub>) exceeding 100 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> are promising candidates for future electronics applications. In this study, we investigated the effects of the SPC temperature of Ar + O<sub>2</sub> + H<sub>2</sub>-sputtered In<sub>2</sub>O<sub>3</sub>:H films on the electron transport properties of In<sub>2</sub>O<sub>3</sub>:H TFTs. The In<sub>2</sub>O<sub>3</sub>:H TFT with an SPC temperature of 300 °C exhibited the best performance, having the largest <i>µ</i><sub>FE</sub> of 139.2 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. In contrast, the <i>µ</i><sub>FE</sub> was slightly degraded with increasing SPC temperature (400 °C and higher). Extended X-ray absorption fine structure analysis revealed that the medium-range ordering in the In<sub>2</sub>O<sub>3</sub>:H network was further improved by annealing up to 600 °C, while a large amount of H<sub>2</sub>O was desorbed from the In<sub>2</sub>O<sub>3</sub>:H films at SPC temperatures above 400 °C, resulting in the creation of defects at grain boundaries. The threshold temperature of H<sub>2</sub>O desorption corresponded well with the carrier transport properties; the <i>µ</i><sub>FE</sub> of the TFTs started to deteriorate at SPC temperatures of 400 °C and higher. Thus, it was suggested that the hydrogen remaining in the film after SPC plays an important role in the passivation of electron traps, especially for grain boundaries, resulting in an enhancement of the <i>µ</i><sub>FE</sub> of In<sub>2</sub>O<sub>3</sub>:H TFTs.https://www.mdpi.com/2079-4991/12/17/2958polycrystalline oxide semiconductorsIn<sub>2</sub>O<sub>3</sub>:Hsolid-phase crystallizationthin-film transistorshigh mobility |
| spellingShingle | Yusaku Magari Wenchang Yeh Toshiaki Ina Mamoru Furuta Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) Nanomaterials polycrystalline oxide semiconductors In<sub>2</sub>O<sub>3</sub>:H solid-phase crystallization thin-film transistors high mobility |
| title | Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) |
| title_full | Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) |
| title_fullStr | Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) |
| title_full_unstemmed | Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) |
| title_short | Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) |
| title_sort | influence of grain boundary scattering on the field effect mobility of solid phase crystallized hydrogenated polycrystalline in sub 2 sub o sub 3 sub in sub 2 sub o sub 3 sub h |
| topic | polycrystalline oxide semiconductors In<sub>2</sub>O<sub>3</sub>:H solid-phase crystallization thin-film transistors high mobility |
| url | https://www.mdpi.com/2079-4991/12/17/2958 |
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