Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H)

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H)

Hydrogenated polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (<i>μ</i><sub...

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Bibliographic Details
Main Authors:	Yusaku Magari, Wenchang Yeh, Toshiaki Ina, Mamoru Furuta
Format:	Article
Language:	English
Published:	MDPI AG 2022-08-01
Series:	Nanomaterials
Subjects:	polycrystalline oxide semiconductors In<sub>2</sub>O<sub>3</sub>:H solid-phase crystallization thin-film transistors high mobility
Online Access:	https://www.mdpi.com/2079-4991/12/17/2958

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