Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the...

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Bibliographic Details
Main Authors: Woo-Seok Kang, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Micromachines
Subjects:
gallium nitride
high-electron-mobility transistor
gate-head
gate-recessed
breakdown voltage
Online Access:https://www.mdpi.com/2072-666X/15/1/57

Internet

https://www.mdpi.com/2072-666X/15/1/57

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