SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

A self-aligned SiGe HBT technology achieving a cutoff frequency (f<sub>T</sub>) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p<sup>+</sup> intrinsic base region was raised to 27.4% to improve...

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Bibliographic Details
Main Authors: Takashi Hashimoto, Kazuaki Tokunaga, Keiko Fukumoto, Yoshinori Yoshida, Hidenori Satoh, Maki Kubo, Akio Shima, Katsuya Oda
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Journal of the Electron Devices Society
Online Access:https://ieeexplore.ieee.org/document/6783783/