Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVA–UVC regions can be severely compromised due to the polarization difference (ΔP) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work, the different situations of th...

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Bibliographic Details
Main Authors: Zhiyuan Liu, Yi Lu, Yue Wang, Rongyu Lin, Chenxin Xiong, Xiaohang Li
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Photonics Journal
Subjects:
AlGaN-based UV LED
electron blocking
hole injection
indium aluminum nitride
last quantum barrier
polarization
Online Access:https://ieeexplore.ieee.org/document/9665406/

Internet

https://ieeexplore.ieee.org/document/9665406/

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