Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss a...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4896284 |