Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss a...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4896284 |
| _version_ | 1818317970567331840 |
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| author | T. Braun C. Schneider S. Maier R. Igusa S. Iwamoto A. Forchel S. Höfling Y. Arakawa M. Kamp |
| author_facet | T. Braun C. Schneider S. Maier R. Igusa S. Iwamoto A. Forchel S. Höfling Y. Arakawa M. Kamp |
| author_sort | T. Braun |
| collection | DOAJ |
| description | In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. |
| first_indexed | 2024-12-13T09:45:47Z |
| format | Article |
| id | doaj.art-e8b3e26853114ba19793d3273989279d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T09:45:47Z |
| publishDate | 2014-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-e8b3e26853114ba19793d3273989279d2022-12-21T23:52:05ZengAIP Publishing LLCAIP Advances2158-32262014-09-0149097128097128-510.1063/1.4896284023409ADVTemperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dotsT. Braun0C. Schneider1S. Maier2R. Igusa3S. Iwamoto4A. Forchel5S. Höfling6Y. Arakawa7M. Kamp8Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, GermanyTechnische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, GermanyTechnische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, GermanyUniversity of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanUniversity of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanTechnische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, GermanyTechnische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, GermanyUniversity of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanTechnische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, GermanyIn this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.http://dx.doi.org/10.1063/1.4896284 |
| spellingShingle | T. Braun C. Schneider S. Maier R. Igusa S. Iwamoto A. Forchel S. Höfling Y. Arakawa M. Kamp Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots AIP Advances |
| title | Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots |
| title_full | Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots |
| title_fullStr | Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots |
| title_full_unstemmed | Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots |
| title_short | Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots |
| title_sort | temperature dependency of the emission properties from positioned in ga as gaas quantum dots |
| url | http://dx.doi.org/10.1063/1.4896284 |
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