Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation

Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation

We describe the stress analysis of silicon oxide (SiO<sub>2</sub>) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test e...

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Bibliographic Details
Main Authors: Shingo Kammachi, Yoshiharu Goshima, Nobutaka Goami, Naoaki Yamashita, Shigeru Kakinuma, Kentaro Nishikata, Nobuyuki Naka, Shozo Inoue, Takahiro Namazu
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Materials
Subjects:
cathodoluminescence spectroscopy
SiO<sub>2</sub> film
nondestructive stress analysis
Si nanocrystal
electron beam irradiation
Raman spectroscopy
Online Access:https://www.mdpi.com/1996-1944/13/20/4490

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https://www.mdpi.com/1996-1944/13/20/4490

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