Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz
Metal-semiconductor (MS) devices, which have ferroelectric (Bi4Ti3O12) interfacial layers, were fabricated and their complex dielectric and electric modules have been studied in a wide range of temperature (80-320 K) at 1 MHz. Our results revealed that these parameters and electrical conductivity w...
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| Format: | Article |
| Language: | English |
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Gazi University
2018-06-01
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| Series: | Gazi Üniversitesi Fen Bilimleri Dergisi |
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| Online Access: | http://dergipark.gov.tr/download/article-file/391186 |