Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz
Metal-semiconductor (MS) devices, which have ferroelectric (Bi4Ti3O12) interfacial layers, were fabricated and their complex dielectric and electric modules have been studied in a wide range of temperature (80-320 K) at 1 MHz. Our results revealed that these parameters and electrical conductivity w...
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| Format: | Article |
| Language: | English |
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Gazi University
2018-06-01
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| Series: | Gazi Üniversitesi Fen Bilimleri Dergisi |
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| Online Access: | http://dergipark.gov.tr/download/article-file/391186 |
| _version_ | 1797913791757811712 |
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| author | Perihan Durmuş |
| author_facet | Perihan Durmuş |
| author_sort | Perihan Durmuş |
| collection | DOAJ |
| description | Metal-semiconductor (MS) devices, which have ferroelectric (Bi4Ti3O12) interfacial layers, were fabricated and their complex dielectric and electric modules have been studied in a wide range of temperature (80-320 K) at 1 MHz. Our results revealed that
these parameters and electrical conductivity were dependent on both the temperature and the voltage applied. The ε'-V and ε"-V plots have reverse bias, depletion and forward bias regions. Significant variations in ε’ and ε’’ characteristics have been observed especially in the depletion and forward bias regions. Variations in the depletion region were referred to the existence of
states/traps (Dit) in the interfacial layer and effects of the temperature. In the case of the forward bias region, they were referred to the serial resistance (Rs) and the existence of the ferroelectric interfacial layer. ε'-V and ε"-V curves exhibited peak behavior in the depletion region. Such peak behavior was attributed to the special distributions of the interfacial states localized between (Bi4Ti3O12)/n-Si interface, the forbidden energy band of the semiconductor, temperature and electric field created by the applied dc voltage. Decreases in the ε', ε", M', M"
and sigma values with respect to the decreasing temperature were referred to the non-existence of the sufficient free carriers at lower temperature and to the high amount of charge transfers from traps to the conduction band as temperature increases. |
| first_indexed | 2024-04-10T12:17:19Z |
| format | Article |
| id | doaj.art-e927d34f7f234d09a7fb1810acbab625 |
| institution | Directory Open Access Journal |
| issn | 2147-9526 2147-9526 |
| language | English |
| last_indexed | 2024-04-10T12:17:19Z |
| publishDate | 2018-06-01 |
| publisher | Gazi University |
| record_format | Article |
| series | Gazi Üniversitesi Fen Bilimleri Dergisi |
| spelling | doaj.art-e927d34f7f234d09a7fb1810acbab6252023-02-15T16:15:43ZengGazi UniversityGazi Üniversitesi Fen Bilimleri Dergisi2147-95262147-95262018-06-016233634410.29109/http-gujsc-gazi-edu-tr.346777Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHzPerihan DurmuşMetal-semiconductor (MS) devices, which have ferroelectric (Bi4Ti3O12) interfacial layers, were fabricated and their complex dielectric and electric modules have been studied in a wide range of temperature (80-320 K) at 1 MHz. Our results revealed that these parameters and electrical conductivity were dependent on both the temperature and the voltage applied. The ε'-V and ε"-V plots have reverse bias, depletion and forward bias regions. Significant variations in ε’ and ε’’ characteristics have been observed especially in the depletion and forward bias regions. Variations in the depletion region were referred to the existence of states/traps (Dit) in the interfacial layer and effects of the temperature. In the case of the forward bias region, they were referred to the serial resistance (Rs) and the existence of the ferroelectric interfacial layer. ε'-V and ε"-V curves exhibited peak behavior in the depletion region. Such peak behavior was attributed to the special distributions of the interfacial states localized between (Bi4Ti3O12)/n-Si interface, the forbidden energy band of the semiconductor, temperature and electric field created by the applied dc voltage. Decreases in the ε', ε", M', M" and sigma values with respect to the decreasing temperature were referred to the non-existence of the sufficient free carriers at lower temperature and to the high amount of charge transfers from traps to the conduction band as temperature increases.http://dergipark.gov.tr/download/article-file/391186MFS structureDielectric parametersElectric modulus |
| spellingShingle | Perihan Durmuş Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz Gazi Üniversitesi Fen Bilimleri Dergisi MFS structure Dielectric parameters Electric modulus |
| title | Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz |
| title_full | Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz |
| title_fullStr | Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz |
| title_full_unstemmed | Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz |
| title_short | Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz |
| title_sort | fabrication of metal ferro electric semiconductor au bi4ti3o12 n si devices and temperature dependent examination of their complex dielectric and electric modulus at 1 mhz |
| topic | MFS structure Dielectric parameters Electric modulus |
| url | http://dergipark.gov.tr/download/article-file/391186 |
| work_keys_str_mv | AT perihandurmus fabricationofmetalferroelectricsemiconductoraubi4ti3o12nsidevicesandtemperaturedependentexaminationoftheircomplexdielectricandelectricmodulusat1mhz |