Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz

Fabrication of Metal/Ferro-Electric/Semiconductor (Au/Bi4Ti3O12/n-Si) Devices and Temperature Dependent Examination of Their Complex Dielectric and Electric Modulus at 1 MHz

Metal-semiconductor (MS) devices, which have ferroelectric (Bi4Ti3O12) interfacial layers, were fabricated and their complex dielectric and electric modules have been studied in a wide range of temperature (80-320 K) at 1 MHz. Our results revealed that these parameters and electrical conductivity w...

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Bibliographic Details
Main Author: Perihan Durmuş
Format: Article
Language:English
Published: Gazi University 2018-06-01
Series:Gazi Üniversitesi Fen Bilimleri Dergisi
Subjects:
MFS structure
Dielectric parameters
Electric modulus
Online Access:http://dergipark.gov.tr/download/article-file/391186

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