Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study

Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study

The narrow-gap magnesium silicide semiconductor Mg2Si is a promising mid-temperature (600–900 K) thermoelectric material. It intrinsically possesses n-type conductivity, and n-type dopants are generally used for improving its thermoelectric performance; however, the synthesis of p-type Mg2Si is rela...

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Bibliographic Details
Main Authors: Naomi Hirayama, Tsutomu Iida, Mariko Sakamoto, Keishi Nishio, Noriaki Hamada
Format: Article
Language:English
Published: Taylor & Francis Group 2019-12-01
Series:Science and Technology of Advanced Materials
Subjects:
magnesium silicide
hole doping
thermoelectric properties
interstitial insertion
p-type semiconductor
structural stability
Online Access:http://dx.doi.org/10.1080/14686996.2019.1580537

Internet

http://dx.doi.org/10.1080/14686996.2019.1580537

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