A Bridge-Level Junction Temperature Estimation Method for SiC MOSFETs Combining Transient Voltage and Current Peaks
Accurate measurement of the junction temperature <i>T</i><sub>j</sub> is crucial for ensuring safe operation and evaluating the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). In this paper, the junction temperature of a half...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/16/10/4105 |