InP and InGaAs grown on InP substrate by molecular beam epitaxy
InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers g...
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
| Julkaistu: |
EDP Sciences
2022-01-01
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| Sarja: | MATEC Web of Conferences |
| Linkit: | https://www.matec-conferences.org/articles/matecconf/pdf/2022/02/matecconf_icpcm2022_03047.pdf |