Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We present that the proposed PNPN tunnel FETs can be realized without ch...

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Bibliographic Details
Main Authors: Chan Shan, Lan Yang, Ying Liu, Zi-Meng Liu, Han Zheng
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Micromachines
Subjects:
electrically doping
PNPN tunnel FET
ambipolar current
tunneling barrier width
TCAD simulation
Online Access:https://www.mdpi.com/2072-666X/14/2/301

Internet

https://www.mdpi.com/2072-666X/14/2/301

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