Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers
This is the first report on the optical and resistance properties of copper aluminum oxide thin films for applications as thermal infrared imagers. The deposition of these films was investigated under three series of reactive magnetron sputtering conditions. Structural characterization identified th...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2021-06-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217921000046 |
| _version_ | 1818669890226094080 |
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| author | Viet Hoang Vu Bao Quang Tu Quyen Xuan Phung Vinh The Tran Nghia Nhan Hoang Dat Dinh Pham Tuan Anh Mai Hien Duy Tong Minh Van Nguyen Hung Quoc Nguyen Hue Minh Nguyen Huy Van Mai Dung Chi Duong Quang Minh Doan Thuat Nguyen-Tran |
| author_facet | Viet Hoang Vu Bao Quang Tu Quyen Xuan Phung Vinh The Tran Nghia Nhan Hoang Dat Dinh Pham Tuan Anh Mai Hien Duy Tong Minh Van Nguyen Hung Quoc Nguyen Hue Minh Nguyen Huy Van Mai Dung Chi Duong Quang Minh Doan Thuat Nguyen-Tran |
| author_sort | Viet Hoang Vu |
| collection | DOAJ |
| description | This is the first report on the optical and resistance properties of copper aluminum oxide thin films for applications as thermal infrared imagers. The deposition of these films was investigated under three series of reactive magnetron sputtering conditions. Structural characterization identified the P63mmc hexagonal crystalline structure of CuAlO2 although the 150- to 350-nm thick films were in a non-stoichiometric CuAlxOy ratio. The thermal coefficient of resistance of the CuAlxOy films was measured to be in the range 1.7–2.2%/K and the resistivity ranged from 0.3 to 1.0 Ω cm with n-type nature. To explain the low indirect bandgap value of the CuAlxOy films, a type-I band alignment bulk heterojunction between CuAlO2 and Cu2O is proposed. This provides an effective method to decrease the resistivity and increase the thermal coefficient of resistance. From their optical characterization, a refractive index of 2.27 ± 0.07 was deduced, thus favoring the CuAlxOy films for antireflection coating in the long infrared wavelength region. A micromachining process of CuAlxOy micro-bridges was demonstrated with well-defined shapes at a pixel pitch of 25 μm. These findings pave the way for the future development of high-performance thermal infrared imagers. |
| first_indexed | 2024-12-17T06:59:24Z |
| format | Article |
| id | doaj.art-e9a0cf4bbe59443b87e4e79d4012cca8 |
| institution | Directory Open Access Journal |
| issn | 2468-2179 |
| language | English |
| last_indexed | 2024-12-17T06:59:24Z |
| publishDate | 2021-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Science: Advanced Materials and Devices |
| spelling | doaj.art-e9a0cf4bbe59443b87e4e79d4012cca82022-12-21T21:59:18ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792021-06-0162202208Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagersViet Hoang Vu0Bao Quang Tu1Quyen Xuan Phung2Vinh The Tran3Nghia Nhan Hoang4Dat Dinh Pham5Tuan Anh Mai6Hien Duy Tong7Minh Van Nguyen8Hung Quoc Nguyen9Hue Minh Nguyen10Huy Van Mai11Dung Chi Duong12Quang Minh Doan13Thuat Nguyen-Tran14Nano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet Nam; Department of Fundamental and Applied Sciences, University of Science and Technology of Hanoi, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Viet NamDepartment of Fundamental and Applied Sciences, University of Science and Technology of Hanoi, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Viet NamNano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet NamNano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet NamNano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet NamNano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet NamMicrofabrication Laboratory and Pilot Plant Center, National Center for Technological Progress, 25 Le Thanh Tong Street, Hoan Kiem District, Hanoi, Viet NamMaterials Science Program, Vietnamese German University, Le Lai Street, Hoa Phu Ward, Binh Duong New City, Binh Duong Province, Viet NamDepartment of Physics, Faculty of Basic and Fundamental Sciences, Viet Nam Maritime University, 484 Lach Tray, Hai Phong, Viet NamNano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet NamLe Quy Don Technical University, 236 Hoang Quoc Viet, Cau Giay District, Hanoi, Viet NamLe Quy Don Technical University, 236 Hoang Quoc Viet, Cau Giay District, Hanoi, Viet NamLe Quy Don Technical University, 236 Hoang Quoc Viet, Cau Giay District, Hanoi, Viet NamFaculty of Physics, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet NamNano and Energy Center, VNU University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai Street, Thanh Xuan District, Hanoi, Viet Nam; Corresponding author. Nano and Energy Center, VNU University of Science, Vietnam National University, Room 503, 5th floor, T2 building, 334 Nguyen Trai street, Thanh Xuan, Hanoi, Viet Nam. Fax: +84 435 406 137.This is the first report on the optical and resistance properties of copper aluminum oxide thin films for applications as thermal infrared imagers. The deposition of these films was investigated under three series of reactive magnetron sputtering conditions. Structural characterization identified the P63mmc hexagonal crystalline structure of CuAlO2 although the 150- to 350-nm thick films were in a non-stoichiometric CuAlxOy ratio. The thermal coefficient of resistance of the CuAlxOy films was measured to be in the range 1.7–2.2%/K and the resistivity ranged from 0.3 to 1.0 Ω cm with n-type nature. To explain the low indirect bandgap value of the CuAlxOy films, a type-I band alignment bulk heterojunction between CuAlO2 and Cu2O is proposed. This provides an effective method to decrease the resistivity and increase the thermal coefficient of resistance. From their optical characterization, a refractive index of 2.27 ± 0.07 was deduced, thus favoring the CuAlxOy films for antireflection coating in the long infrared wavelength region. A micromachining process of CuAlxOy micro-bridges was demonstrated with well-defined shapes at a pixel pitch of 25 μm. These findings pave the way for the future development of high-performance thermal infrared imagers.http://www.sciencedirect.com/science/article/pii/S2468217921000046TCROxide semiconductorMicro-bolometersUncooled thermal imagerUFPA |
| spellingShingle | Viet Hoang Vu Bao Quang Tu Quyen Xuan Phung Vinh The Tran Nghia Nhan Hoang Dat Dinh Pham Tuan Anh Mai Hien Duy Tong Minh Van Nguyen Hung Quoc Nguyen Hue Minh Nguyen Huy Van Mai Dung Chi Duong Quang Minh Doan Thuat Nguyen-Tran Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers Journal of Science: Advanced Materials and Devices TCR Oxide semiconductor Micro-bolometers Uncooled thermal imager UFPA |
| title | Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers |
| title_full | Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers |
| title_fullStr | Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers |
| title_full_unstemmed | Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers |
| title_short | Tailoring optical and resistance properties of the functional CuAlxOy semiconductor for applications as thermal infrared imagers |
| title_sort | tailoring optical and resistance properties of the functional cualxoy semiconductor for applications as thermal infrared imagers |
| topic | TCR Oxide semiconductor Micro-bolometers Uncooled thermal imager UFPA |
| url | http://www.sciencedirect.com/science/article/pii/S2468217921000046 |
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