Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix
A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystall...
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Fformat: | Erthygl |
Iaith: | English |
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AIP Publishing LLC
2014-10-01
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Cyfres: | AIP Advances |
Mynediad Ar-lein: | http://dx.doi.org/10.1063/1.4897378 |