Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystall...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron: Arindam Kole, Partha Chaudhuri
Fformat: Erthygl
Iaith:English
Cyhoeddwyd: AIP Publishing LLC 2014-10-01
Cyfres:AIP Advances
Mynediad Ar-lein:http://dx.doi.org/10.1063/1.4897378