Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications
Abstract A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n+-drain is presented in this paper. Two highly-doped p+ silicon layers are devised to induce holes in an intrinsic source region. Due to employing a double gate configuration and Hafnium...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-10-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-44096-5 |