Investigation of the electrical characteristics and sensitivity analysis of a nanoscale double gate metal source drain transistor with InAs as the channel material via Green’s function formalism
In this paper, the electrical characteristics of a nanoscale double gate metal source drain transistor is thoroughly investigated. Since reduction of the channel thickness results in the variation of energy level in sub-bands and increment of band gap energy, the bandstructure of the device is calcu...
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| Format: | Article |
| Language: | English |
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Isfahan University of Technology
2023-02-01
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| Series: | Iranian Journal of Physics Research |
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| Online Access: | https://ijpr.iut.ac.ir/article_3334_cc3917998305747b6014e0472cee3c96.pdf |